Channel TypeN

ConfigurationSingle

Dimensions3.04 x 1.4 x 1.02 mm

Drain Current3.9 A

Drain to Source On Resistance0.058 Ω

Drain to Source Voltage40 V

Fall Time25 ns

Forward Transconductance11 S

Forward Voltage, Diode1.2 V

Gate to Source Voltage±20 V

Height0.04" (1.02mm)

Input Capacitance540 pF @ 20 V

Junction to Ambient Thermal Resistance100 °C/W

Length0.119" (3.04mm)

Maximum Operating Temperature+150 °C

Minimum Operating Temperature-55 °C

Mounting TypeSurface Mount

Number of Elements per Chip1

Number of Pins3

Operating and Storage Temperature–55 to +150 C

Package TypeTO-236

PolarizationN-Channel

Power Dissipation1.25 W

SeriesSI23 Series

Temperature Operating Range-55 to +150 °C

Total Gate Charge15 nC

Turn Off Delay Time30 ns

Turn On Delay Time10 ns

Typical Gate Charge @ Vgs10 nC @ 20 V

Voltage, Breakdown, Drain to Source40 V

Width0.055" (1.4mm)