Channel TypeN

ConfigurationSingle

Dimensions3.04 x 1.4 x 1.02 mm

Drain Current4.5 A

Drain to Source On Resistance0.08 Ω

Drain to Source Voltage30 V

Fall Time35 ns

Forward Transconductance6 S

Forward Voltage, Diode1.2 V

Gate to Source Voltage±20 V

Height0.04" (1.02mm)

Input Capacitance350 pF @ 15 V

Junction to Ambient Thermal Resistance100 °C/W

Length0.119" (3.04mm)

Maximum Operating Temperature+150 °C

Minimum Operating Temperature-55 °C

Mounting TypeSurface Mount

Number of Elements per Chip1

Number of Pins3

Operating and Storage Temperature-55 to +150 C

Package TypeTO-236

PolarizationN-Channel

Power Dissipation1.66 W

SeriesSI23 Series

Temperature Operating Range-55 to +150 °C

Total Gate Charge9.6 nC

Turn Off Delay Time17 ns

Turn On Delay Time30 ns

Typical Gate Charge @ Vgs6.35 nC @ 15 V

Voltage, Breakdown, Drain to Source30 V

Width0.055" (1.4mm)