SeriesDTMOSVI

PackageTube

FET TypeN-Channel

TechnologyMOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)650 V

Current - Continuous Drain (Id) @ 25°C24A (Ta)

Drive Voltage (Max Rds On, Min Rds On)10V

Rds On (Max) @ Id, Vgs110mOhm @ 12A, 10V

Vgs(th) (Max) @ Id4V @ 1.02mA

Gate Charge (Qg) (Max) @ Vgs40 nC @ 10 V

Vgs (Max)±30V

Input Capacitance (Ciss) (Max) @ Vds2250 pF @ 300 V

FET Feature-

Power Dissipation (Max)45W (Tc)

Operating Temperature150°C

Mounting TypeThrough Hole

Supplier Device PackageTO-220SIS

Package / CaseTO-220-3 Full Pack