Channel TypeN

ConfigurationSingle

Dimensions3.04 x 1.4 x 1.02 mm

Drain Current2.3 A

Drain to Source On Resistance0.192 Ω

Drain to Source Voltage60 V

Fall Time17 ns

Forward Transconductance5 S

Forward Voltage, Diode1.2 V

Gate to Source Voltage±20 V

Height0.04" (1.02mm)

Input Capacitance190 pF @ 30 V

Junction to Ambient Thermal Resistance115 °C/W

Length0.119" (3.04mm)

Maximum Operating Temperature+150 °C

Minimum Operating Temperature-55 °C

Mounting TypeSurface Mount

Number of Elements per Chip1

Number of Pins3

Operating and Storage Temperature-55 to +150 C

Package TypeTO-236

PolarizationN-Channel

Power Dissipation1.66 W

SeriesSI23 Series

Temperature Operating Range-55 to +150 °C

Total Gate Charge6.8 nC

Turn Off Delay Time17 ns

Turn On Delay Time6 ns

Typical Gate Charge @ Vgs4.5 nC @ 30 V

Voltage, Breakdown, Drain to Source60 V

Width0.055" (1.4mm)