型号 | 功能描述 | 生产厂商 | 厂商LOGO | PDF大小 | PDF页数 | 下载地址 | 相关型号 |
SI2305A | 连续漏极电流(Id)(25°C 时):4.2A 漏源电压(Vdss):20V 栅源极阈值电压:500mV @ 250uA(最小) 漏源导通电阻:65mΩ @ 4.2A,4.5V 最大功率耗散(Ta=25°C):1.38W 类型:P沟道 | UMW(友台半导体) |  | 415.48 Kbytes | 共4页 |  | 无 |
SI2305ADS | P-Channel 8-V (D-S) MOSFET | VISHAY[Vishay Siliconix] | ![VISHAY[Vishay Siliconix]的LOGO](/PdfSupLogo/177VISHAY.GIF) | 139.51 Kbytes | 共7页 |  | SI1051X,SI5941DU,SIA414DJ,SI5945DU,SI3552DV_05,SI2303BDS_08,SI2351DS,SI2301CDS,SI6955ADQ,SI4845DY |
SI2305ADS-T1-E3 | P-Channel 8-V (D-S) MOSFET | VISHAY[Vishay Siliconix] | ![VISHAY[Vishay Siliconix]的LOGO](/PdfSupLogo/177VISHAY.GIF) | 139.51 Kbytes | 共7页 |  | SI1051X,SI5941DU,SIA414DJ,SI5945DU,SI3552DV_05,SI2303BDS_08,SI2351DS,SI2301CDS,SI6955ADQ,SI4845DY |
SI2305ADS-T1-GE3 | P-Channel 8-V (D-S) MOSFET | VISHAY[Vishay Siliconix] | ![VISHAY[Vishay Siliconix]的LOGO](/PdfSupLogo/177VISHAY.GIF) | 139.51 Kbytes | 共7页 |  | SI1051X,SI5941DU,SIA414DJ,SI5945DU,SI3552DV_05,SI2303BDS_08,SI2351DS,SI2301CDS,SI6955ADQ,SI4845DY |
SI2305ADS-T1-GE3 | P-Channel 20-V (D-S) MOSFET | VBSEMI[VBsemi Electronics Co.,Ltd] | ![VBSEMI[VBsemi Electronics Co.,Ltd]的LOGO](/PdfSupLogo/1345VBSEMI.GIF) | 1035.14 Kbytes | 共9页 |  | 无 |