| 销售商 | 型号 | 制造商 | 功能描述 | 价格 |
Digi-Key 得捷电子 | IPD60R600P7ATMA1 | Infineon Technologies | MOSFET N-CH 650V 6A TO252-3 | $1.24000 |
Digi-Key 得捷电子 | IPD60R600P7SAUMA1 | Infineon Technologies | MOSFET N-CH 600V 6A TO252-3 | $0.83000 |
Digi-Key 得捷电子 | IPD60R600P7SAUMA1 | Infineon Technologies | IPD60R600 - 600V, 0.6OHM, N-CHAN | $0.26000 |
Digi-Key 得捷电子 | IPD60R600P7SE8228AUMA1 | Infineon Technologies | MOSFET N-CH 600V 6A TO252-3 | $0.33688 |
Mouser 贸泽电子 | IPD60R600P7ATMA1 | Infineon Technologies | MOSFET | 1:¥9.379
10:¥7.9891
100:¥6.1585
500:¥5.4466
1,000:¥4.3053
2,500:¥4.3053
|
Mouser 贸泽电子 | IPD60R600P7SAUMA1 | Infineon Technologies | MOSFET CONSUMER | 1:¥6.0681
10:¥5.1076
100:¥3.2996
1,000:¥2.6329
2,500:¥2.6329
|
立创商城 | IPD60R600P7 | Infineon(英飞凌) | MOS(场效应管) | 1+:￥9.03
200+:￥3.5
500+:￥3.37
1000+:￥3.31
|
立创商城 | IPD60R600P7S | Infineon(英飞凌) | MOS(场效应管) | 1+:￥5.18
200+:￥2.01
500+:￥1.94
1000+:￥1.9
|
立创商城 | IPD60R600P7S E8228 | Infineon(英飞凌) | 预售晶体管 | 1+:￥5.18
200+:￥2.01
500+:￥1.94
1000+:￥1.9
|
立创商城 | IPD60R600P7SAUMA1 | Infineon(英飞凌) | 连续漏极电流（Id）（25°C 时）：6A(Tc) 漏源电压（Vdss）：600V 栅源极阈值电压：4V @ 80uA 漏源导通电阻：600mΩ @ 1.7A,10V 最大功率耗散（Ta=25°C）：30W (Tc) 类型：N沟道 | 1+:￥3.06
10+:￥2.31
30+:￥2.17
100+:￥2.03
500+:￥1.97
1000+:￥1.94
|