| 销售商 | 型号 | 制造商 | 功能描述 | 价格 |
Allied Electronics | SI4599DY-T1-GE3 | Siliconix / Vishay | SI4599DY-T1-GE3 Dual N/P-channel MOSFET Transistor,4.7 A,6.8 A,40V,8-Pin SOIC | +1:$0.66
+10:$0.62
+50:$0.61
+100:$0.58 |
Arrow(艾睿) | SI4599DY-T1-GE3 | Vishay | FET - 阵列 TrenchFET® 分立半导体产品 半导体 MOSFET 40/40V 5.3/11.8A 3.0/3.1W | 2500+:￥2.42
5000+:￥2.26
12500+:￥2.17
25000+:￥2.09
62500+:￥2.06
125000+:￥2.00991+:￥5.28
10+:￥4.13
100+:￥3.14
500+:￥2.6701
1000+:￥2.48
2500+:￥2.48
5000+:￥2.27
10000+:￥2.25
25000+:￥2.172500+:￥2.12500+:￥1.23
5000+:￥1.191+:￥1.58 |
Avnet Express | SI4599DY-T1-GE3 | Vishay Semiconductors | N- AND P- CHANNEL 40-V (D-S) MOSFET | 2,500 : $0.1742
2,500 : $0.1608
10,000 : $0.1493
|
Avnet Express | SI4599DY-T1-GE3 | Vishay Siliconix | N- AND P- CHANNEL 40-V (D-S) MOSFET - Tape and Reel | 2,500 : $0.2
12,499 : $0.1918
24,999 : $0.1899
|
Chip1Stop | SI4599DY-T1-GE3 | Vishay Intertechnologies | MOSFET
RoHS : Compliant | 2,500 : $0.332
|
ChipOneStop | SI4599DY-T1-GE3 | Vishay | FET - 阵列 TrenchFET® 分立半导体产品 半导体 MOSFET 40/40V 5.3/11.8A 3.0/3.1W | 2500+:￥2.42
5000+:￥2.26
12500+:￥2.17
25000+:￥2.09
62500+:￥2.06
125000+:￥2.00991+:￥5.28
10+:￥4.13
100+:￥3.14
500+:￥2.6701
1000+:￥2.48
2500+:￥2.48
5000+:￥2.27
10000+:￥2.25
25000+:￥2.172500+:￥2.1 |
Digi-Key 得捷电子 | SI4599DY-T1-GE3 | Vishay Siliconix | MOSFET N/P-CH 40V 6.8A 8SOIC | $0.95000 |
Digi-Key 得捷电子 | SI4599DY-T1-GE3 | Vishay Siliconix | MOSFET N/P-CH 40V 6.8A 8SOIC | 10 : $0.782
1 : $0.89
|
Digi-Key 得捷电子 | SI4599DY-T1-GE3 | Vishay | FET - 阵列 TrenchFET® 分立半导体产品 半导体 MOSFET 40/40V 5.3/11.8A 3.0/3.1W | 2500+:￥2.42
5000+:￥2.26
12500+:￥2.17
25000+:￥2.09
62500+:￥2.06
125000+:￥2.0099 |
element14 Asia-Pacific | SI4599DY-T1-GE3 | Vishay Intertechnologies | MOSFET NP-CH 40V SO8
RoHS : Compliant | 1 : $6.26
10 : $4.82
50 : $4.5
100 : $4.25
500 : $3.07
2,500 : $2.53
|
element14 Asia-Pacific | SI4599DY-T1-GE3 | Vishay Siliconix | MOSFET N & P CH 40V 6.8A SOIC-8
RoHS : Compliant | 1 : $4.9
10 : $3.9
25 : $3.5
100 : $3.2
250 : $2.7
500 : $2.2
1,000 : $1.9
2,500 : $1.9
|
Future Electronics | SI4599DY-T1-GE3 | Vishay Intertechnologies | Dual N & P-Channel 40 V 0.0355/0.045 Ohms Surface Mount Power Mosfet - SOIC-8
RoHS : Compliant | 2,500 : $0.1811
5,000 : $0.1744
|
Future(富昌) | SI4599DY-T1-GE3 | Vishay | FET - 阵列 TrenchFET® 分立半导体产品 半导体 MOSFET 40/40V 5.3/11.8A 3.0/3.1W | 2500+:￥2.42
5000+:￥2.26
12500+:￥2.17
25000+:￥2.09
62500+:￥2.06
125000+:￥2.00991+:￥5.28
10+:￥4.13
100+:￥3.14
500+:￥2.6701
1000+:￥2.48
2500+:￥2.48
5000+:￥2.27
10000+:￥2.25
25000+:￥2.172500+:￥2.12500+:￥1.23
5000+:￥1.19 |
Mouser 贸泽电子 | SI4599DY-T1-GE3 | Vishay | FET - 阵列 TrenchFET® 分立半导体产品 半导体 MOSFET 40/40V 5.3/11.8A 3.0/3.1W | 2500+:￥2.42
5000+:￥2.26
12500+:￥2.17
25000+:￥2.09
62500+:￥2.06
125000+:￥2.00991+:￥5.28
10+:￥4.13
100+:￥3.14
500+:￥2.6701
1000+:￥2.48
2500+:￥2.48
5000+:￥2.27
10000+:￥2.25
25000+:￥2.17 |
Mouser 贸泽电子 | SI4599DY-T1-GE3 | Vishay / Siliconix | MOSFET -40V Vds 20V Vgs SO-8 N&P PAIR | 1:¥7.0738
10:¥5.6387
100:¥4.2827
500:¥3.5369
1,000:¥2.9493
2,500:¥2.9493
|
Verical | SI4599DY-T1-GE3 | Vishay | FET - 阵列 TrenchFET® 分立半导体产品 半导体 MOSFET 40/40V 5.3/11.8A 3.0/3.1W | 2500+:￥2.42
5000+:￥2.26
12500+:￥2.17
25000+:￥2.09
62500+:￥2.06
125000+:￥2.00991+:￥5.28
10+:￥4.13
100+:￥3.14
500+:￥2.6701
1000+:￥2.48
2500+:￥2.48
5000+:￥2.27
10000+:￥2.25
25000+:￥2.172500+:￥2.12500+:￥1.23
5000+:￥1.191+:￥1.581+:￥2.1601 |
Verical | SI4599DY-T1-GE3 | Vishay Intertechnologies | Trans MOSFET N/P-CH 40V 5.6A/4.7A 8-Pin SOIC N T/R | $0.282
|
立创商城 | SI4599DY | VBsemi(台湾微碧) | 连续漏极电流（Id）（25°C 时）：5.3A(Tc),4.9A(Tc) 漏源电压（Vdss）：60V 最大功率耗散（Ta=25°C）：3.1W,3.4W(Tc) 类型：N沟道和P沟道 | 1+:￥2.02
10+:￥1.49
30+:￥1.39
100+:￥1.3
500+:￥1.25
1000+:￥1.23
|
立创商城 | SI4599DY-T1-GE3 | VISHAY(威世) | 连续漏极电流（Id）（25°C 时）：6.8A,5.8A 漏源电压（Vdss）：40V 栅源极阈值电压：3V @ 250uA 漏源导通电阻：35.5mΩ @ 5A,10V 最大功率耗散（Ta=25°C）：3W 类型：N沟道和P沟道 | 1+:￥1.81
10+:￥1.75
|