| 销售商 | 型号 | 制造商 | 功能描述 | 价格 |
Allied Electronics | SI4922BDY-T1-E3 | Siliconix / Vishay | MOSFET; Dual N-Channel 30-V (D-S) | +2500:$1.24
+5000:$1.20
+7500:$1.12 |
Am2 | SI4922BDY-T1-E3 | Vishay | FET - 阵列 TrenchFET® 分立半导体产品 半导体 MOSFET DUAL N-CH 30V(D-S) | 2500+:￥3.9
5000+:￥3.71
12500+:￥3.56
25000+:￥3.46
62500+:￥3.341+:￥9.44
10+:￥7.5399
100+:￥5.8
500+:￥5.14
1000+:￥5.0299
2500+:￥4.8
5000+:￥4.62
10000+:￥4.5001
25000+: |
Arrow(艾睿) | SI4922BDY-T1-GE3 | Vishay | FET - 阵列 TrenchFET® 分立半导体产品 | 2500+:￥5.211+:￥9.44
10+:￥7.5399
100+:￥5.8
500+:￥5.14
1000+:￥5.0299
2500+:￥4.8
5000+:￥4.62
10000+:￥4.5001
25000+:￥4.41+:￥5.22 |
Avnet Express | SI4922BDY-T1-E3 | Vishay Siliconix | TRANS MOSFET N-CH 30V 8A 8SOIC N - Tape and Reel | 2,500 : $0.6707
12,499 : $0.6587
24,999 : $0.6445
|
Avnet Express | SI4922BDY-T1-E3 | Vishay Semiconductors | - Tape and Reel | 2,500 : $1.1188
|
Digi-Key 得捷电子 | SI4922BDY-T1-E3 | Vishay Siliconix | MOSFET 2N-CH 30V 8A 8-SOIC | 10 : $1.164
1 : $1.3
|
Digi-Key 得捷电子 | SI4922BDY-T1-E3 | Vishay | FET - 阵列 TrenchFET® 分立半导体产品 半导体 MOSFET DUAL N-CH 30V(D-S) | 2500+:￥3.9
5000+:￥3.71
12500+:￥3.56
25000+:￥3.46
62500+:￥3.34 |
Digi-Key 得捷电子 | SI4922BDY-T1-E3 | Vishay Siliconix | MOSFET 2N-CH 30V 8A 8-SOIC | $1.62000 |
Digi-Key 得捷电子 | SI4922BDY-T1-GE3 | Vishay | FET - 阵列 TrenchFET® 分立半导体产品 | 2500+:￥5.21 |
element14 Asia-Pacific | SI4922BDY-T1-E3 | Vishay Siliconix | DUAL N CHANNEL MOSFET 30V SOIC | 1 : $7.5
10 : $6.2
25 : $5.5
100 : $4.9
250 : $4.4
500 : $4.2
1,000 : $4.1
2,500 : $4.0
|
Future Electronics | SI4922BDY-T1-E3 | Vishay Intertechnologies | Dual N-Channel 30 V 0.016 Ohm Surface Mount Power Mosfet - SOIC-8
RoHS : Compliant | 750 : $0.6055
|
Mouser 贸泽电子 | SI4922BDY-T1-E3 | Vishay | FET - 阵列 TrenchFET® 分立半导体产品 半导体 MOSFET DUAL N-CH 30V(D-S) | 2500+:￥3.9
5000+:￥3.71
12500+:￥3.56
25000+:￥3.46
62500+:￥3.341+:￥9.44
10+:￥7.5399
100+:￥5.8
500+:￥5.14
1000+:￥5.0299
2500+:￥4.8
5000+:￥4.62
10000+:￥4.5001
25000+:￥4.4 |
Mouser 贸泽电子 | SI4922BDY-T1-E3 | Vishay / Siliconix | MOSFET DUAL N-CH 30V(D-S) | 1:¥12.3735
10:¥10.2943
100:¥7.91
500:¥6.9834
1,000:¥5.7856
2,500:¥5.7856
|
Mouser 贸泽电子 | SI4922BDY-T1-GE3 | Vishay | FET - 阵列 TrenchFET® 分立半导体产品 | 2500+:￥5.211+:￥9.44
10+:￥7.5399
100+:￥5.8
500+:￥5.14
1000+:￥5.0299
2500+:￥4.8
5000+:￥4.62
10000+:￥4.5001
25000+:￥4.4 |
Mouser 贸泽电子 | SI4922BDY-T1-GE3 | Vishay / Siliconix | MOSFET 30V 8.0A 3.1W 16mohm @ 10V | 1:¥12.3735
10:¥10.2943
100:¥7.91
500:¥6.9834
1,000:¥5.7856
2,500:¥5.7856
|
Verical | SI4922BDY-T1-GE3 | Vishay | FET - 阵列 TrenchFET® 分立半导体产品 | 2500+:￥5.211+:￥9.44
10+:￥7.5399
100+:￥5.8
500+:￥5.14
1000+:￥5.0299
2500+:￥4.8
5000+:￥4.62
10000+:￥4.5001
25000+:￥4.41+:￥5.221+:￥4.59 |
立创商城 | SI4922BDY | VBsemi(台湾微碧) | 连续漏极电流（Id）（25°C 时）：8.5A(Tc) 漏源电压（Vdss）：30V 栅源极阈值电压：2.5V @ 250uA 漏源导通电阻：16mΩ @ 8A,10V 最大功率耗散（Ta=25°C）：3.1W(Tc) 类型：N沟道 | 1+:￥1.3516
10+:￥0.9988
30+:￥0.934
100+:￥0.78219
500+:￥0.75627
1000+:￥0.74349
|
立创商城 | SI4922BDY-T1-GE3 | VISHAY(威世) | MOS(场效应管) | 1+:￥7.42
10+:￥5.51
30+:￥5.16
100+:￥4.81
500+:￥4.65
1000+:￥4.58
|