SeriesE

PackageTube

FET TypeN-Channel

TechnologyMOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)800 V

Current - Continuous Drain (Id) @ 25°C4.4A (Tc)

Drive Voltage (Max Rds On, Min Rds On)10V

Rds On (Max) @ Id, Vgs1.35Ohm @ 1.5A, 10V

Vgs(th) (Max) @ Id4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs16.5 nC @ 10 V

Vgs (Max)±30V

Input Capacitance (Ciss) (Max) @ Vds321 pF @ 100 V

FET Feature-

Power Dissipation (Max)62.5W (Tc)

Operating Temperature-55°C ~ 150°C (TJ)

Mounting TypeSurface Mount

Supplier Device PackageD-PAK (TO-252AA)

Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63