Channel TypeP

ConfigurationDual Drain, Dual Gate, Quad

Dimensions4.5 x 3.1 x 1.05 mm

Drain Current±3.5 A

Drain to Source On Resistance0.085 Ω

Drain to Source Voltage-30 V

Forward Transconductance7.2 S

Forward Voltage, Diode-1.2 V

Gate to Source Voltage±20 V

Height0.041" (1.05mm)

Junction to Ambient Thermal Resistance125 °C/W

Length0.177" (4.5mm)

Maximum Operating Temperature+150 °C

Minimum Operating Temperature-55 °C

Mounting TypeSurface Mount

Number of Elements per Chip2

Number of Pins8

Operating Temperature-55 to 150 °C

Package TypeTSSOP

PolarizationP-Channel

Power Dissipation1 W

SeriesSI69 Series

Temperature Operating Range-55 to +150 °C

Total Gate Charge17 nC

Turn Off Delay Time33 ns

Turn On Delay Time13 ns

Typical Gate Charge @ Vgs17 nC @ -10 V

Voltage, Breakdown, Drain to Source-30 V

Width0.122" (3.1mm)