销售商 | 型号 | 制造商 | 功能描述 | 价格 |
 Allied Electronics | SI4840DY-T1-E3 | Vishay Siliconix | MOSFET, Power; N-Ch; VDSS 40V; RDS(ON) 0.0075Ohm; ID 10A; SO-8; PD 1.56W; VGS +/-20V | 250 : $1.2 500 : $1.1143 1,000 : $1.0833 2,500 : $1.04
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 Arrow(艾睿) | SI4840DY-T1-E3 | Vishay | FET - 单 TrenchFET® 分立半导体产品 | 价格未公开 |
 Bristol Electronics | SI4840DY-T1-E3 | Vishay Intertechnologies | | 价格未公开 |
 Chip One Exchange | SI4840DY-T1-E3 | Vishay Intertechnologies | | 价格未公开 |
 Digi-Key 得捷电子 | SI4840DY-T1-E3 | Vishay Siliconix | MOSFET N-CH 40V 10A 8SO | Obsolete |
 Digi-Key 得捷电子 | SI4840DY-T1-E3 | Vishay | FET - 单 TrenchFET® 分立半导体产品 | 价格未公开 |
 Mouser 贸泽电子 | SI4840DY-T1-E3 | Vishay | FET - 单 TrenchFET® 分立半导体产品 | 价格未公开 |
 Quest Components | SI4840DY-T1-E3 | Vishay Intertechnologies | MOSFET Transistor, N-Channel, SO | 734 : $0.7875 341 : $0.819 1 : $2.52
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 Quest Components | SI4840DY-T1-E3 | Unknown | MOSFET Transistor, N-Channel, SO | 1,082 : $0.814 625 : $0.925 1 : $2.96
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 立创商城 | SI4840DY-T1-E3 | VBsemi(台湾微碧) | 连续漏极电流(Id)(25°C 时):12A(Tc) 漏源电压(Vdss):40V 栅源极阈值电压:3V @ 250uA 漏源导通电阻:10mΩ @ 12.4A,10V 最大功率耗散(Ta=25°C):6W(Tc) 类型:N沟道 | 1+:¥1.3234 10+:¥0.9705 30+:¥0.9057 100+:¥0.8409 500+:¥0.8121 1000+:¥0.7979
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