Series-

PackageBulk

FET TypeP-Channel

TechnologyMOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)200 V

Current - Continuous Drain (Id) @ 25°C11A (Tc)

Drive Voltage (Max Rds On, Min Rds On)-

Rds On (Max) @ Id, Vgs500mOhm @ 6A, 10V

Vgs(th) (Max) @ Id4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs90 nC @ 10 V

Vgs (Max)±20V

Input Capacitance (Ciss) (Max) @ Vds1100 pF @ 25 V

FET Feature-

Power Dissipation (Max)125W (Tc)

Operating Temperature-55°C ~ 150°C (TJ)

Mounting TypeThrough Hole

Supplier Device PackageTO-220AB

Package / CaseTO-220-3