| 销售商 | 型号 | 制造商 | 功能描述 | 价格 |
Allied Electronics | IRF7101TRPBF | Infineon | MOSFET, Power,Dual N-Ch,VDSS 20V,RDS(ON) 0.1Ohm,ID 3.5A,SO-8,PD 2W,VGS +/-12V | 4000:$0.87 |
Am2 | IRF7101TRPBF | International Rectifier | FET - 阵列 HEXFET® 分立半导体产品 半导体 MOSFET MOSFT DUAL NCh 20V 3.5A | 1+:￥8.29
10+:￥4.82
25+:￥4.06
50+:￥3.63
100+:￥3.3
250+:￥2.97
500+:￥2.78
1000+:￥2.631+:￥5.91
10+:￥2.63
100+:￥2.3
1000+:￥2.17
4000+:￥2.1601
8000+:￥2.06
24000+:￥1.98
48000+:￥1.98
100000+:￥1.98174+:￥2.43 |
Arrow(艾睿) | IRF7101TRPBF | International Rectifier | FET - 阵列 HEXFET® 分立半导体产品 半导体 MOSFET MOSFT DUAL NCh 20V 3.5A | 1+:￥8.29
10+:￥4.82
25+:￥4.06
50+:￥3.63
100+:￥3.3
250+:￥2.97
500+:￥2.78
1000+:￥2.631+:￥5.91
10+:￥2.63
100+:￥2.3
1000+:￥2.17
4000+:￥2.1601
8000+:￥2.06
24000+:￥1.98
48000+:￥1.98
100000+:￥1.98174+:￥2.431+:￥2.1601 |
Avnet Express | IRF7101TRPBF | International Rectifier | | 4,000 : $0.338
|
Digi-Key 得捷电子 | IRF7101TRPBF | Infineon Technologies AG | MOSFET 2N-CH 20V 3.5A 8-SOIC | 10 : $0.683
1 : $0.78
|
Digi-Key 得捷电子 | IRF7101TRPBF | International Rectifier | FET - 阵列 HEXFET® 分立半导体产品 半导体 MOSFET MOSFT DUAL NCh 20V 3.5A | 1+:￥8.29
10+:￥4.82
25+:￥4.06
50+:￥3.63
100+:￥3.3
250+:￥2.97
500+:￥2.78
1000+:￥2.63 |
element14 Asia-Pacific | IRF7101TRPBF | International Rectifier | N CHANNEL MOSFET 20V 3.5A SOIC
RoHS : Compliant | 1 : $6.72
10 : $2.99
100 : $2.29
1,000 : $2.16
4,000 : $1.94
8,000 : $1.86
24,000 : $1.77
|
Future Electronics | IRF7101TRPBF | International Rectifier | Dual N-Channel 20 V 2 W 15 nC Hexfet Power Mosfet Surface Mount - SOIC-8
RoHS : Compliant | 4,000 : $0.2778
|
Mouser 贸泽电子 | IRF7101TRPBF | Infineon / IR | MOSFET MOSFT DUAL NCh 20V 3.5A | 1:¥6.7574
10:¥5.6613
100:¥3.6499
1,000:¥2.9154
4,000:¥2.9154
|
Mouser 贸泽电子 | IRF7101TRPBF | International Rectifier | FET - 阵列 HEXFET® 分立半导体产品 半导体 MOSFET MOSFT DUAL NCh 20V 3.5A | 1+:￥8.29
10+:￥4.82
25+:￥4.06
50+:￥3.63
100+:￥3.3
250+:￥2.97
500+:￥2.78
1000+:￥2.631+:￥5.91
10+:￥2.63
100+:￥2.3
1000+:￥2.17
4000+:￥2.1601
8000+:￥2.06
24000+:￥1.98
48000+:￥1.98
100000+:￥1.98 |
立创商城 | IRF7101TR | VBsemi(台湾微碧) | MOS(场效应管) | 1+:￥1.8953
10+:￥1.4005
30+:￥1.3096
100+:￥1.09692
500+:￥1.06056
1000+:￥1.04256
|
立创商城 | IRF7101TRPBF | Infineon(英飞凌) | 连续漏极电流（Id）（25°C 时）：3.5A 漏源电压（Vdss）：-20V 栅源极阈值电压：3V @ 250uA 漏源导通电阻：100mΩ @ 1.8A,10V 最大功率耗散（Ta=25°C）：2W 类型：双N沟道 | 1+:￥1.608
10+:￥1.206
30+:￥1.134
100+:￥1.056
500+:￥1.026
1000+:￥1.008
|