销售商 | 型号 | 制造商 | 功能描述 | 价格 |
 Am2 | DMN2005LP4K-7 | Diodes Inc. | FET - 单 - 分立半导体产品 半导体 MOSFET 30V 300mA | 3000+:¥0.72 6000+:¥0.68 15000+:¥0.62 30000+:¥0.58 75000+:¥0.5199 150000+:¥0.50011+:¥3.07 10+:¥1.81 100+:¥0.85 1000+:¥0.64 3000+:¥0.62 9000+:¥0.6 24000+:¥0.57 45000+:¥0.54 99000+:¥0.51738+:¥0.57 |
 Arrow(艾睿) | DMN2005LP4K-7 | DIODES ZETEX | | 3000+:¥0.72 6000+:¥0.68 15000+:¥0.62 30000+:¥0.58 75000+:¥0.5199 150000+:¥0.50011+:¥3.07 10+:¥1.81 100+:¥0.85 1000+:¥0.64 3000+:¥0.62 9000+:¥0.6 24000+:¥0.57 45000+:¥0.54 99000+:¥0.51738+:¥0.571+:¥0.6699 |
 Avnet Express | DMN2005LP4K-7 | Diodes Incorporated | | 3,000 : $0.1
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 Chip1Stop | DMN2005LP4K-7 | Diodes Incorporated | Trans MOSFET N-CH 20V 0.3A 3-Pin DFN T/R RoHS : Compliant | 3,000 : $0.0939
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 Digi-Key 得捷电子 | DMN2005LP4K-7 | Diodes Incorporated | MOSFET N-CH 20V 200MA 3-DFN | 15,000 : $0.08525 6,000 : $0.0935 3,000 : $0.099
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 Digi-Key 得捷电子 | DMN2005LP4K-7 | Diodes Inc. | FET - 单 - 分立半导体产品 半导体 MOSFET 30V 300mA | 3000+:¥0.72 6000+:¥0.68 15000+:¥0.62 30000+:¥0.58 75000+:¥0.5199 150000+:¥0.5001 |
 Future Electronics | DMN2005LP4K-7 | Diodes Incorporated | Single N-Channel 20 V 1.5 Ohm Enhancement Mode Transistor-DFN-3 RoHS : Compliant | 3,000 : $0.0907 6,000 : $0.0862 12,000 : $0.0843
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 Mouser 贸泽电子 | DMN2005LP4K-7 | Diodes Incorporated | MOSFET 20V 300mA | 1:¥3.3787 10:¥2.3956 100:¥1.10627 1,000:¥0.84524 3,000:¥0.72207
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 Mouser 贸泽电子 | DMN2005LP4K-7 | Diodes Inc. | FET - 单 - 分立半导体产品 半导体 MOSFET 30V 300mA | 3000+:¥0.72 6000+:¥0.68 15000+:¥0.62 30000+:¥0.58 75000+:¥0.5199 150000+:¥0.50011+:¥3.07 10+:¥1.81 100+:¥0.85 1000+:¥0.64 3000+:¥0.62 9000+:¥0.6 24000+:¥0.57 45000+:¥0.54 99000+:¥0.51 |
 Verical | DMN2005LP4K-7 | Diodes Incorporated | Trans MOSFET N-CH 20V 0.3A Automotive 3-Pin DFN T/R | $0.0715
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 Verical | DMN2005LP4K-7 | DIODES ZETEX | | 3000+:¥0.72 6000+:¥0.68 15000+:¥0.62 30000+:¥0.58 75000+:¥0.5199 150000+:¥0.50011+:¥3.07 10+:¥1.81 100+:¥0.85 1000+:¥0.64 3000+:¥0.62 9000+:¥0.6 24000+:¥0.57 45000+:¥0.54 99000+:¥0.51738+:¥0.571+:¥0.66991+:¥0.51 |
 立创商城 | DMN2005LP4K-7 | DIODES(美台) | 连续漏极电流(Id)(25°C 时):200mA 漏源电压(Vdss):20V 栅源极阈值电压:900mV @ 100uA 漏源导通电阻:1.5Ω @ 10mA,4V 最大功率耗散(Ta=25°C):400mW 类型:N沟道 | 1+:¥2.1 10+:¥1.52 30+:¥1.42 100+:¥1.31 500+:¥1.26 1000+:¥1.24
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