Current - Continuous Drain (Id) @ 25° C：65A

Drain to Source Voltage (Vdss)：20V

FET Feature：Logic Level Gate

FET Type：MOSFET N-Channel, Metal Oxide

Gate Charge (Qg) @ Vgs：32nC @ 10V

Input Capacitance (Ciss) @ Vds：1700pF @ 10V

Mounting Type：Through Hole

Package / Case：TO-220-3 Isolated Tab

Power - Max：2W

Rds On (Max) @ Id, Vgs：5.7 mOhm @ 40A, 10V

Supplier Device Package：TO-220-3

Vgs(th) (Max) @ Id：2.5V @ 1mA