Current - Continuous Drain (Id) @ 25° C：13A

Drain to Source Voltage (Vdss)：30V

FET Feature：Logic Level Gate

FET Type：MOSFET P-Channel, Metal Oxide

Gate Charge (Qg) @ Vgs：67nC @ 10V

Input Capacitance (Ciss) @ Vds：2810pF @ 10V

Mounting Type：Surface Mount

Package / Case：8-SOIC (0.173", 4.40mm Width)

Power - Max：2W

Rds On (Max) @ Id, Vgs：9 mOhm @ 6.5A, 10V

Supplier Device Package：8-PSOP

Vgs(th) (Max) @ Id：2.5V @ 1mA