Current - Continuous Drain (Id) @ 25° C：3.8A

Drain to Source Voltage (Vdss)：20V

FET Feature：Logic Level Gate

FET Type：2 N-Channel (Dual)

Gate Charge (Qg) @ Vgs：2.9nc @ 4.5V

Input Capacitance (Ciss) @ Vds：220pF @ 10V

Mounting Type：Surface Mount

Package / Case：6-VDFN Exposed Pad

Power - Max：1.1W

Rds On (Max) @ Id, Vgs：65 mOhm @ 3A, 10V

Supplier Device Package：6-MLP (3x3)

Vgs(th) (Max) @ Id：2V @ 250µA