Current - Continuous Drain (Id) @ 25° C：3A
Drain to Source Voltage (Vdss)：20V
FET Feature：Diode (Isolated)
FET Type：MOSFET N-Channel, Metal Oxide
Gate Charge (Qg) @ Vgs：3.1nC @ 4.5V
Input Capacitance (Ciss) @ Vds：190pF @ 10V
Mounting Type：Surface Mount
Package / Case：6-VDFN Exposed Pad
Power - Max：1.3W
Rds On (Max) @ Id, Vgs：50 mOhm @ 3A, 10V
Supplier Device Package：6-MLP (3x3)
Vgs(th) (Max) @ Id：2V @ 250µA