Current - Continuous Drain (Id) @ 25° C：8.6A

Drain to Source Voltage (Vdss)：20V

FET Feature：Logic Level Gate

FET Type：2 N-Channel (Dual)

Gate Charge (Qg) @ Vgs：6nC @ 4V

Input Capacitance (Ciss) @ Vds：564pF @ 10V

Mounting Type：Surface Mount

Package / Case：6-VFDFN Exposed Pad

Power - Max：700mW

Rds On (Max) @ Id, Vgs：17.5 mOhm @ 4A, 4.5V

Supplier Device Package：6-HWSON

Vgs(th) (Max) @ Id：1.5V @ 1mA