| 销售商 | 型号 | 制造商 | 功能描述 | 价格 |
Allied Electronics | SI9945BDY-T1-GE3 | Siliconix / Vishay | MOSFET, Dual N-Ch, Vds 60V, Vgs +/- 20V, Rds(on) 46mohm, Id 5.3, SO-8, Pd 3.1W | +1:$0.72
+25:$0.68
+100:$0.65
+250:$0.61 |
Avnet Express | SI9945BDY-T1-GE3 | Vishay Semiconductors | - Tape and Reel | 2,500 : $0.34
4,999 : $0.2465
7,499 : $0.2295
|
Chip1Stop | SI9945BDY-T1-GE3 | Vishay Intertechnologies | MOSFET
RoHS : Compliant | 2,500 : $0.356
|
ChipOneStop | SI9945BDY-T1-GE3 | Vishay | FET - 阵列 TrenchFET® 分立半导体产品 半导体 MOSFET 60V 5.3A 3.1W 58mohm @ 10V | 2500+:￥2.27
5000+:￥2.12
12500+:￥2.03
25000+:￥1.95
62500+:￥1.92
125000+:￥1.871+:￥5.1601
10+:￥4.14
100+:￥3.1799
500+:￥2.8201
1000+:￥2.75
2500+:￥2.62
5000+:￥2.5199
10000+:￥2.45
25000+:￥2.381+:￥6.05
10+:￥4.85
100+:￥3.722500+:￥1.8201 |
Digi-Key 得捷电子 | SI9945BDY-T1-GE3 | Vishay Siliconix | MOSFET 2N-CH 60V 5.3A 8-SOIC | $0.91000 |
Digi-Key 得捷电子 | SI9945BDY-T1-GE3 | Vishay Siliconix | MOSFET 2N-CH 60V 5.3A 8-SOIC | 10 : $0.731
1 : $0.83
|
Digi-Key 得捷电子 | SI9945BDY-T1-GE3 | Vishay | FET - 阵列 TrenchFET® 分立半导体产品 半导体 MOSFET 60V 5.3A 3.1W 58mohm @ 10V | 2500+:￥2.27
5000+:￥2.12
12500+:￥2.03
25000+:￥1.95
62500+:￥1.92
125000+:￥1.87 |
element14 Asia-Pacific | SI9945BDY-T1-GE3 | Vishay Intertechnologies | MOSFET NN CH 60V 5.3A 8SOIC
RoHS : Compliant | 1 : $5.94
10 : $5.63
100 : $5.33
250 : $5.04
500 : $4.81
1,000 : $4.13
2,500 : $2.67
5,000 : $2.5
|
element14 e络盟电子 | SI9945BDY-T1-GE3 | Vishay | FET - 阵列 TrenchFET® 分立半导体产品 半导体 MOSFET 60V 5.3A 3.1W 58mohm @ 10V | 2500+:￥2.27
5000+:￥2.12
12500+:￥2.03
25000+:￥1.95
62500+:￥1.92
125000+:￥1.871+:￥5.1601
10+:￥4.14
100+:￥3.1799
500+:￥2.8201
1000+:￥2.75
2500+:￥2.62
5000+:￥2.5199
10000+:￥2.45
25000+:￥2.381+:￥6.05
10+:￥4.85
100+:￥3.72 |
Future Electronics | SI9945BDY-T1-GE3 | Vishay Intertechnologies | SI9945BDY Series 60V 0.058 Ohm 20nC Dual N-Channel Surface Mount Mosfet - SOIC-8
RoHS : Compliant | 2,500 : $0.2889
5,000 : $0.2778
|
Future(富昌) | SI9945BDY-T1-GE3 | Vishay | FET - 阵列 TrenchFET® 分立半导体产品 半导体 MOSFET 60V 5.3A 3.1W 58mohm @ 10V | 2500+:￥2.27
5000+:￥2.12
12500+:￥2.03
25000+:￥1.95
62500+:￥1.92
125000+:￥1.871+:￥5.1601
10+:￥4.14
100+:￥3.1799
500+:￥2.8201
1000+:￥2.75
2500+:￥2.62
5000+:￥2.5199
10000+:￥2.45
25000+:￥2.381+:￥6.05
10+:￥4.85
100+:￥3.722500+:￥1.82011+:￥2.05
1000+:￥1.97
4000+:￥1.89 |
Mouser 贸泽电子 | SI9945BDY-T1-GE3 | Vishay | FET - 阵列 TrenchFET® 分立半导体产品 半导体 MOSFET 60V 5.3A 3.1W 58mohm @ 10V | 2500+:￥2.27
5000+:￥2.12
12500+:￥2.03
25000+:￥1.95
62500+:￥1.92
125000+:￥1.871+:￥5.1601
10+:￥4.14
100+:￥3.1799
500+:￥2.8201
1000+:￥2.75
2500+:￥2.62
5000+:￥2.5199
10000+:￥2.45
25000+:￥2.38 |
Mouser 贸泽电子 | SI9945BDY-T1-GE3 | Vishay / Siliconix | MOSFET 60V Vds 20V Vgs SO-8 | 1:¥6.9156
10:¥5.65
100:¥4.3392
500:¥3.729
1,000:¥2.938
2,500:¥2.938
|
RS Components | SI9945BDY-T1-GE3 | Vishay Intertechnologies | MOSFET Dual N-Ch 60V 5.3A/4.7A SOIC8 | 价格未公开 |
Rutronik | SI9945BDY-T1-GE3 | Vishay Intertechnologies | DUAL 60V 5A 58mOhm SO-8 RoHSconf | 价格未公开 |
Verical | SI9945BDY-T1-GE3 | Vishay Intertechnologies | Trans MOSFET N-CH 60V 4.3A 8-Pin SOIC N T/R | $0.2587
|
Wuhan P&S | SI9945BDY-T1-GE3 | Vishay Intertechnologies | 60V,5.3A,Dual N-Channel MOSFET | 1 : $0.77
100 : $0.54
1,000 : $0.39
|
立创商城 | SI9945BDY-T1 | VBsemi(台湾微碧) | MOS(场效应管) | 1+:￥1.9559
10+:￥1.4706
30+:￥1.3815
100+:￥1.2924
500+:￥1.2528
1000+:￥1.2332
|
立创商城 | SI9945BDY-T1-GE3 | VISHAY(威世) | 连续漏极电流（Id）（25°C 时）：5.3A 漏源电压（Vdss）：60V 栅源极阈值电压：3V @ 250uA 漏源导通电阻：72mΩ @ 3.9A,4.5V 最大功率耗散（Ta=25°C）：3.1W 类型：双N沟道 | 1+:￥2.78
10+:￥2.1
30+:￥1.98
100+:￥1.7945
500+:￥1.746
1000+:￥1.7169
|