Channel TypeP

ConfigurationDual Gate, Dual Source, Quad Drain

Dimensions3.15 x 3.15 x 1.07 mm

Drain Current-3.6 A

Drain to Source On Resistance0.066 Ω

Drain to Source Voltage-20 V

Forward Transconductance20 S

Forward Voltage, Diode-1.2 V

Gate to Source Voltage±8 V

Height0.042" (1.07mm)

Junction to Ambient Thermal Resistance75 °C/W

Length0.124" (3.15mm)

Maximum Operating Temperature+150 °C

Minimum Operating Temperature-55 °C

Mounting TypeSurface Mount

Number of Elements per Chip2

Number of Pins8

Operating Temperature-55 to 150 °C

Package TypePowerPAK-SO-8

PolarizationP-Channel

Power Dissipation1.3 W

SeriesSI79 Series

Temperature Operating Range-55 to +150 °C

Total Gate Charge15.3 nC

Turn Off Delay Time72 ns

Turn On Delay Time20 ns

Typical Gate Charge @ Vgs15.3 nC @ -4.5 V

Voltage, Breakdown, Drain to Source-20 V

Width0.124" (3.15mm)