Channel TypeP

ConfigurationDual Drain, Dual Gate, Quad

Dimensions4.5 x 3.1 x 1.05 mm

Drain Current-4.9 A

Drain to Source On Resistance0.015 Ω

Drain to Source Voltage-20 V

Fall Time150 ns

Forward Transconductance34 S

Forward Voltage, Diode-1.1 V

Gate to Source Voltage±8 V

Height0.041" (1.05mm)

Junction to Ambient Thermal Resistance120 °C/W

Length0.177" (4.5mm)

Maximum Operating Temperature+150 °C

Minimum Operating Temperature-55 °C

Mounting TypeSurface Mount

Number of Elements per Chip2

Number of Pins8

Operating and Storage Temperature-55 to +150 C

Package TypeTSSOP

PolarizationP-Channel

Power Dissipation1.05 W

SeriesSI64 Series

Temperature Operating Range-55 to +150 °C

Total Gate Charge60 nC

Turn Off Delay Time300 ns

Turn On Delay Time55 ns

Typical Gate Charge @ Vgs40 nC @ -10 V

Voltage, Breakdown, Drain to Source-20 V

Width0.122" (3.1mm)