Channel TypeP

ConfigurationHex Drain

Dimensions3.1 x 1.7 x 1.1 mm

Drain Current-6 A

Drain to Source On Resistance0.028 Ω

Drain to Source Voltage-12 V

Fall Time110 ns

Forward Transconductance22 S

Forward Voltage, Diode-1.2 V

Gate to Source Voltage±8 V

Height0.043" (1.1mm)

Input Capacitance1400 pF @ -6 V

Junction to Ambient Thermal Resistance50 °C/W

Length0.122" (3.1mm)

Maximum Operating Temperature+150 °C

Minimum Operating Temperature-55 °C

Mounting TypeSurface Mount

Number of Elements per Chip1

Number of Pins8

Operating and Storage Temperature-55 to +150 C

Package Type1206-8 ChipFET

PolarizationP-Channel

Power Dissipation6.3 W

SeriesSI54 Series

Temperature Operating Range-55 to +150 °C

Total Gate Charge40 nC

Turn Off Delay Time100 ns

Turn On Delay Time10 ns

Typical Gate Charge @ Vgs26 nC @ -6 V

Voltage, Breakdown, Drain to Source-12 V

Width0.067" (1.7mm)