Channel TypeN

ConfigurationDual Gate, Dual Source, Quad Drain

Dimensions5 x 4 x 1.55 mm

Drain Current6.9 A

Drain to Source On Resistance0.051 Ω

Drain to Source Voltage30 V

Forward Transconductance12 S

Forward Voltage, Diode1.2 V

Gate to Source Voltage±20 V

Height0.061" (1.55mm)

Input Capacitance530 pF @ 15 V

Junction to Ambient Thermal Resistance58 °C/W

Length0.196" (5mm)

Maximum Operating Temperature+150 °C

Minimum Operating Temperature-55 °C

Mounting TypeSurface Mount

Number of Elements per Chip2

Number of Pins8

Operating Temperature-55 to 150 °C

Package TypeSO-8

PolarizationN-Channel

Power Dissipation2.8 W

SeriesSI49 Series

Temperature Operating Range-55 to +150 °C

Total Gate Charge9.1 nC

Turn Off Delay Time12 ns

Turn On Delay Time5 ns

Typical Gate Charge @ Vgs9.1 nC @ 10 V

Voltage, Breakdown, Drain to Source30 V

Width0.157" (4mm)