型号 | 功能描述 | 生产厂商 | 厂商LOGO | PDF大小 | PDF页数 | 下载地址 | 相关型号 |
PMV40UN | TrenchMOS ultra low level FET | PHILIPS[NXP Semiconductors] | ![PHILIPS[NXP Semiconductors]的LOGO](/PdfSupLogo/117PHILIPS.GIF) | 241.73 Kbytes | 共12页 |  | PSMN006-20K,PMN34UN,PMN27UN,PMV30UN,PMV65XP,PMR280UN,PMWD15UN,PMF280UN,PMR400UN,PMWD19UN |
PMV40UN | TrenchMOS ultra low level FET Battery management | TYSEMI[TY Semiconductor Co., Ltd] | ![TYSEMI[TY Semiconductor Co., Ltd]的LOGO](/PdfSupLogo/975TYSEMI.GIF) | 114.97 Kbytes | 共3页 |  | 无 |
PMV40UN | TrenchMOS⢠ultra low level FET | ZPSEMI[ZP Semiconductor] | ![ZPSEMI[ZP Semiconductor]的LOGO](/PdfSupLogo/1034ZPSEMI.GIF) | 186.48 Kbytes | 共3页 |  | 无 |
PMV40UN | N-Channel 30-V (D-S) MOSFET | VBSEMI[VBsemi Electronics Co.,Ltd] | ![VBSEMI[VBsemi Electronics Co.,Ltd]的LOGO](/PdfSupLogo/1345VBSEMI.GIF) | 1025.45 Kbytes | 共9页 |  | 无 |
PMV40UN,215 | MOSFET N-CH 30V 4.9A SOT-23 | NXP USA Inc. |  | 341.14 Kbytes | 共13页 |  | 无 |
PMV40UN,215 | SMALL SIGNAL FIELD-EFFECT TRANSI | NXP USA Inc. |  | 341.14 Kbytes | 共13页 |  | 无 |
PMV40UN2 | 30 V, N-channel Trench MOSFET | PHILIPS[NXP Semiconductors] | ![PHILIPS[NXP Semiconductors]的LOGO](/PdfSupLogo/117PHILIPS.GIF) | 267.62 Kbytes | 共15页 |  | 无 |
PMV40UN2_15 | 30 V, N-channel Trench MOSFET | PHILIPS[NXP Semiconductors] | ![PHILIPS[NXP Semiconductors]的LOGO](/PdfSupLogo/117PHILIPS.GIF) | 267.62 Kbytes | 共15页 |  | 无 |
PMV40UN2R | MOSFET 30V N-channel Trench MOSFET | Nexperia |  | 721.21 Kbytes | 共15页 |  | 无 |
PMV40UN2R | MOSFET N-CH 30V 3.7A TO236AB | Nexperia USA Inc. |  | 721.99 Kbytes | 共15页 |  | 无 |
PMV40UN2R | 连续漏极电流(Id)(25°C 时):3.7A 漏源电压(Vdss):30V 栅源极阈值电压:900mV @ 250uA 漏源导通电阻:44mΩ @ 3.7A,4.5V 最大功率耗散(Ta=25°C):490mW 类型:N沟道 | Nexperia(安世) |  | 721.99 Kbytes | 共15页 |  | 无 |