封装/外壳:PG-TO263-3
安装风格:SMD/SMT
通道数量:1Channel
晶体管极性:N-Channel
Vds-漏源极击穿电压:650V
Id-连续漏极电流:6A
Rds On-漏源导通电阻:594mOhms
Vgs th-栅源极阈值电压:3.5V
Vgs - 栅极-源极电压:20V
Qg-栅极电荷:20nC
最小工作温度:-40C
最大工作温度:+150C
配置:Single
Pd-功率耗散:62.5W
通道模式:Enhancement
封装:CutTape
系列:CoolMOS
晶体管类型:1N-Channel
下降时间:10ns
上升时间:8ns
典型关闭延迟时间:40ns
典型接通延迟时间:9ns
Packing Type:TAPE & REEL
Moisture Level:1
RDS (on) max:660.0mΩ
IDpuls max:17.0A
VDS max:650.0V
ID max:6.0A
Technology:CoolMOS™ CFDA
RthJC max:2.0 K/W
QG (typ @10V):20.0 nC
Package:D2PAK (TO-263)
Budgetary Price €/1k:0.83
Ptot max:62.5W
Polarity:N
RthJA max:62.0K/W
VGS(th) min max:3.5 V 4.5 V
Special Features:automotive
Simulator:TINA
Language:PSpice
Encryption:no
Product Category:Power MOSFET HV CoolMOS™
无铅情况/RoHs:无铅/符合RoHs