| 型号 | 功能描述 | 生产厂商 | 厂商LOGO | PDF大小 | PDF页数 | 下载地址 | 相关型号 |
| BF999 | Silicon N Channel MOSFET Triode (For high-frequency stages up to 300 MHz, preferably in FM applications) | SIEMENS[Siemens Semiconductor Group] | ![SIEMENS[Siemens Semiconductor Group]的LOGO](/PdfSupLogo/144SIEMENS.GIF) | 116.21 Kbytes | 共5页 |  | BF987,BF543,BF994S,BF550,BF995,BF996S,BF998,BF554,BF2000W,BF1005 |
| BF999 | Silicon N-Channel MOSFET Triode | INFINEON[Infineon Technologies AG] | ![INFINEON[Infineon Technologies AG]的LOGO](/PdfSupLogo/211INFINEON.GIF) | 133.96 Kbytes | 共5页 |  | BF543,ECH8401,2SK3546J,2SK3779-01R,2SK3932-01MR,BF987,2SK1007-01,2SK957-MR,2SK3579-01MR,2SK3318 |
| BF999 | Silicon N-Channel MOSFET Triode | INFINEON[Infineon Technologies AG] | ![INFINEON[Infineon Technologies AG]的LOGO](/PdfSupLogo/211INFINEON.GIF) | 62.57 Kbytes | 共6页 |  | 无 |
| BF999_07 | Silicon N-Channel MOSFET Triode | INFINEON[Infineon Technologies AG] | ![INFINEON[Infineon Technologies AG]的LOGO](/PdfSupLogo/211INFINEON.GIF) | 62.57 Kbytes | 共6页 |  | 无 |
| BF999E6327 | 连续漏极电流(Id)(25°C 时):30mA 漏源电压(Vdss):20V 栅源极阈值电压:- 漏源导通电阻:- 最大功率耗散(Ta=25°C):200mW 类型:N沟道 | Infineon(英飞凌) |  | 60.21 Kbytes | 共6页 |  | 无 |
| BF999E6327HTSA1 | 射频金属氧化物半导体场效应(RF MOSFET)晶体管 Silicon N-Channel MOSFET Triode | Infineon Technologies |  | 59.44 Kbytes | 共6页 |  | 无 |
| BF999E6327HTSA1 | MOSFET N-CH RF 20V 30MA SOT-23 | Infineon Technologies |  | 60.21 Kbytes | 共6页 |  | 无 |
| BF999E6327HTSA1 | MOSFET N-CH RF 20V 30MA SOT-23 | Infineon Technologies |  | 60.21 Kbytes | 共6页 |  | 无 |
| BF999E6433HTMA1 | MOSFET N-CH 20V 30MA SOT-23 | Infineon Technologies |  | 60.21 Kbytes | 共6页 |  | 无 |