Drain to Source Voltage (Vdss)：12V

FET Feature：Logic Level Gate

FET Type：MOSFET P-Channel, Metal Oxide

Gate Charge (Qg) @ Vgs：2.7nC @ 4V

Input Capacitance (Ciss) @ Vds：250pF @ 10V

Mounting Type：Surface Mount

Package / Case：6-WSOF

Power - Max：200mW

Rds On (Max) @ Id, Vgs：88 mOhm @ 1.5A, 4.5V

Supplier Device Package：6-WSOF

Vgs(th) (Max) @ Id：1.5V @ 1mA