Current - Continuous Drain (Id) @ 25° C：2.5A

Drain to Source Voltage (Vdss)：30V

FET Feature：Logic Level Gate

FET Type：MOSFET P-Channel, Metal Oxide

Gate Charge (Qg) @ Vgs：3.4nC @ 10V

Input Capacitance (Ciss) @ Vds：175pF @ 10V

Mounting Type：Surface Mount

Package / Case：6-WSOF

Power - Max：200mW

Rds On (Max) @ Id, Vgs：165 mOhm @ 1.5A, 10V

Supplier Device Package：6-WSOF

Vgs(th) (Max) @ Id：2.5V @ 1mA