Current - Continuous Drain (Id) @ 25° C:12A
Drain to Source Voltage (Vdss):20V
FET Feature:Logic Level Gate
FET Type:MOSFET N-Channel, Metal Oxide
Gate Charge (Qg) @ Vgs:27nC @ 4V
Input Capacitance (Ciss) @ Vds:2020pF @ 10V
Mounting Type:Surface Mount
Package / Case:8-TSSOP (0.173", 4.40mm Width)
Power - Max:2W
Rds On (Max) @ Id, Vgs:8.6 mOhm @ 6A, 4.5V
Supplier Device Package:8-TSSOP
Vgs(th) (Max) @ Id:1.5V @ 1mA