Series-

PackageBulk

FET TypeP-Channel

TechnologyMOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)20 V

Current - Continuous Drain (Id) @ 25°C10A (Ta)

Drive Voltage (Max Rds On, Min Rds On)-

Rds On (Max) @ Id, Vgs15.2mOhm @ 5A, 4.5V

Vgs(th) (Max) @ Id1.5V @ 1mA

Gate Charge (Qg) (Max) @ Vgs20 nC @ 4 V

Vgs (Max)-

Input Capacitance (Ciss) (Max) @ Vds2.2 pF @ 10 V

FET Feature-

Power Dissipation (Max)-

Operating Temperature-

Mounting TypeSurface Mount

Supplier Device Package8-TSSOP

Package / Case8-TSSOP (0.173", 4.40mm Width)