Current - Continuous Drain (Id) @ 25° C：8A

Drain to Source Voltage (Vdss)：30V

FET Feature：Logic Level Gate

FET Type：MOSFET N-Channel, Metal Oxide

Gate Charge (Qg) @ Vgs：10nC @ 10V

Input Capacitance (Ciss) @ Vds：520pF @ 10V

Mounting Type：Surface Mount

Package / Case：8-TSSOP (0.173", 4.40mm Width)

Power - Max：2W

Rds On (Max) @ Id, Vgs：21 mOhm @ 4A, 10V

Supplier Device Package：8-TSSOP

Vgs(th) (Max) @ Id：2.5V @ 1mA