Series-

PackageTray

FET TypeN-Channel

TechnologyMOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)600 V

Current - Continuous Drain (Id) @ 25°C11.5A (Ta)

Drive Voltage (Max Rds On, Min Rds On)10V

Rds On (Max) @ Id, Vgs300mOhm @ 5.8A, 10V

Vgs(th) (Max) @ Id3.7V @ 600µA

Gate Charge (Qg) (Max) @ Vgs25 nC @ 10 V

Vgs (Max)±30V

Input Capacitance (Ciss) (Max) @ Vds890 pF @ 300 V

FET Feature-

Power Dissipation (Max)110W (Tc)

Operating Temperature150°C

Mounting TypeThrough Hole

Supplier Device PackageTO-3P(N)

Package / CaseTO-3P-3, SC-65-3