Channel TypeP

ConfigurationDual Gate, Dual Source, Quad Drain

Dimensions3.1 x 1.7 x 1.1 mm

Drain Current±2.1 A

Drain to Source On Resistance0.155 Ω

Drain to Source Voltage-20 V

Forward Transconductance5 S

Forward Voltage, Diode-1.2 V

Gate to Source Voltage±12 V

Height0.043" (1.1mm)

Junction to Ambient Thermal Resistance90 °C/W

Length0.122" (3.1mm)

Maximum Operating Temperature+150 °C

Minimum Operating Temperature-55 °C

Mounting TypeSurface Mount

Number of Elements per Chip2

Number of Pins8

Operating Temperature-55 to 150 °C

Package Type1206-8 ChipFET

PolarizationP-Channel

Power Dissipation1.1 W

SeriesSI59 Series

Temperature Operating Range-55 to +150 °C

Total Gate Charge3 nC

Turn Off Delay Time25 ns

Turn On Delay Time13 ns

Typical Gate Charge @ Vgs3 nC @ 10 V

Voltage, Breakdown, Drain to Source-20 V

Width0.067" (1.7mm)