型号 | 功能描述 | 生产厂商 | 厂商LOGO | PDF大小 | PDF页数 | 下载地址 | 相关型号 |
SI2301A | P-Channel Enhancement Mode Field Effect Transistor | MCC[Micro Commercial Components] | ![MCC[Micro Commercial Components]的LOGO](/PdfSupLogo/94MCC.GIF) | 285.47 Kbytes | 共5页 |  | 无 |
Si2301ADS | Triple-Supply Power Management IC for Powering FPGAs and DSPs | TI[Texas Instruments] | ![TI[Texas Instruments]的LOGO](/PdfSupLogo/158TI.GIF) | 1312.98 Kbytes | 共29页 |  | 无 |
SI2301ADS | P-Channel 2.5-V (G-S) MOSFET | VISHAY[Vishay Siliconix] | ![VISHAY[Vishay Siliconix]的LOGO](/PdfSupLogo/177VISHAY.GIF) | 39.9 Kbytes | 共4页 |  | SI6433BDQ,SI5443DC,SI1039X,SI4493DY,SI5903DC,SI6562DQ,SI4562DY,SI1303DL,SI1903DL,SI4463BDY |
SI2301ADS-T1 | | VBsemi(台湾微碧) |  | 893.4 Kbytes | 共9页 |  | 无 |
SI2301ADS-T1-GE3 | P-Channel 20-V (D-S) MOSFET | VBSEMI[VBsemi Electronics Co.,Ltd] | ![VBSEMI[VBsemi Electronics Co.,Ltd]的LOGO](/PdfSupLogo/1345VBSEMI.GIF) | 1035.17 Kbytes | 共9页 |  | 无 |
SI2301A-TP | 连续漏极电流(Id)(25°C 时):2.8A 漏源电压(Vdss):-20V 栅源极阈值电压:900mV @ 250uA 漏源导通电阻:120mΩ @ 2.8A,4.5V 最大功率耗散(Ta=25°C):1.25W 类型:P沟道 | MCC(美微科) |  | 333.39 Kbytes | 共5页 |  | 无 |