| 销售商 | 型号 | 制造商 | 功能描述 | 价格 |
Allied Electronics | SI2300DS-T1-GE3 | Siliconix / Vishay | MOSFET N-CH 30V 3.6A SOT-23 | +3000:$0.74
+6000:$0.50 |
Allied Electronics | SI2300DS-T1-GE3 | Vishay Siliconix | 30V 3.6A N-CH MOSFET | 250 : $0.24
500 : $0.21
1,000 : $0.16
3,000 : $0.14
|
Arrow(艾睿) | SI2300DS-T1-GE3 | Vishay | FET - 单 TrenchFET® 分立半导体产品 半导体 MOSFET 30V 3.6A N-CH MOSFET | 3000+:￥1.0099
6000+:￥0.95
15000+:￥0.88
30000+:￥0.8399
75000+:￥0.8201
150000+:￥0.781+:￥2.44
10+:￥1.83
100+:￥1.36
500+:￥1.15
1000+:￥1.0099
3000+:￥0.97
6000+:￥0.97
9000+:￥0.89
24000+:￥0.873000+:￥1.16011+:￥1.1601 |
Avnet Express | SI2300DS-T1-GE3 | Vishay Semiconductors | N-CHANNEL 30-V (D-S) MOSFET | 3,000 : $0.162
|
Avnet Express | SI2300DS-T1-GE3 | Vishay Siliconix | N-CHANNEL 30-V (D-S) MOSFET - Tape and Reel | 3,000 : $0.1372
14,999 : $0.1246
29,999 : $0.1227
|
Chip1Stop | SI2300DS-T1-GE3 | Vishay Intertechnologies | Unidentified
RoHS : Compliant | 3,000 : $0.23
|
ChipOneStop | SI2300DS-T1-GE3 | Vishay | FET - 单 TrenchFET® 分立半导体产品 半导体 MOSFET 30V 3.6A N-CH MOSFET | 3000+:￥1.0099
6000+:￥0.95
15000+:￥0.88
30000+:￥0.8399
75000+:￥0.8201
150000+:￥0.781+:￥2.44
10+:￥1.83
100+:￥1.36
500+:￥1.15
1000+:￥1.0099
3000+:￥0.97
6000+:￥0.97
9000+:￥0.89
24000+:￥0.873000+:￥1.1601 |
Digi-Key 得捷电子 | SI2300DS-T1-GE3 | Vishay Siliconix | MOSFET N-CH 30V 3.6A SOT-23 | 10 : $0.348
1 : $0.41
|
Digi-Key 得捷电子 | SI2300DS-T1-GE3 | Vishay | FET - 单 TrenchFET® 分立半导体产品 半导体 MOSFET 30V 3.6A N-CH MOSFET | 3000+:￥1.0099
6000+:￥0.95
15000+:￥0.88
30000+:￥0.8399
75000+:￥0.8201
150000+:￥0.78 |
Digi-Key 得捷电子 | SI2300DS-T1-GE3 | Vishay Siliconix | MOSFET N-CH 30V 3.6A SOT-23 | 15,000 : $0.1215
6,000 : $0.1305
3,000 : $0.1395
|
Digi-Key 得捷电子 | SI2300DS-T1-GE3 | Vishay Siliconix | MOSFET N-CH 30V 3.6A SOT23-3 | $0.43000 |
Digi-Key 得捷电子 | SI2300-TP | Micro Commercial Co | MOSFET N-CH 20V 4.5A SOT23 | $0.52000 |
element14 Asia-Pacific | SI2300DS-T1-GE3 | Vishay Siliconix | MOSFET N CH 30V 3.6A SOT-23
RoHS : Compliant | 1 : $3.7
10 : $2.8
100 : $2.5
250 : $2.2
500 : $1.9
1,000 : $1.5
3,000 : $1.32
9,000 : $1.24
|
Future Electronics | SI2300DS-T1-GE3 | Vishay Intertechnologies | Single N-Channel 30 V 68 mO 3 nC Surface Mount Power Mosfet - SOT-23
RoHS : Compliant | 3,000 : $0.1156
9,000 : $0.1111
|
Mouser 贸泽电子 | SI2300DS-T1-GE3 | Vishay | FET - 单 TrenchFET® 分立半导体产品 半导体 MOSFET 30V 3.6A N-CH MOSFET | 3000+:￥1.0099
6000+:￥0.95
15000+:￥0.88
30000+:￥0.8399
75000+:￥0.8201
150000+:￥0.781+:￥2.44
10+:￥1.83
100+:￥1.36
500+:￥1.15
1000+:￥1.0099
3000+:￥0.97
6000+:￥0.97
9000+:￥0.89
24000+:￥0.87 |
Mouser 贸泽电子 | SI2300DS-T1-GE3 | Vishay / Siliconix | MOSFET 30V Vds 12V Vgs SOT-23 | 1:¥3.2996
10:¥2.4973
100:¥1.8645
500:¥1.5255
1,000:¥1.1865
3,000:¥1.1865
|
Verical | SI2300DS-T1-GE3 | Vishay | FET - 单 TrenchFET® 分立半导体产品 半导体 MOSFET 30V 3.6A N-CH MOSFET | 3000+:￥1.0099
6000+:￥0.95
15000+:￥0.88
30000+:￥0.8399
75000+:￥0.8201
150000+:￥0.781+:￥2.44
10+:￥1.83
100+:￥1.36
500+:￥1.15
1000+:￥1.0099
3000+:￥0.97
6000+:￥0.97
9000+:￥0.89
24000+:￥0.873000+:￥1.16011+:￥1.16011+:￥1.27 |
Verical | SI2300DS-T1-GE3 | Vishay Intertechnologies | Trans MOSFET N-CH 30V 3.1A 3-Pin SOT-23 T/R | $0.1708
|
Verical | SI2300DS-T1-GE3 | Vishay Intertechnologies | Trans MOSFET N-CH 30V 3.1A 3-Pin SOT-23 T/R | $0.1713
|
立创商城 | SI2300 | KEXIN(科信) | MOS(场效应管) | 10+:￥0.245073
100+:￥0.180099
300+:￥0.168165
1000+:￥0.156231
5000+:￥0.150927
10000+:￥0.148307
|
立创商城 | SI2300 | TuoFeng(拓锋) | MOS(场效应管) | 20+:￥0.179986
200+:￥0.132505
600+:￥0.123784
2000+:￥0.115063
10000+:￥0.111187
20000+:￥0.109272
|
立创商城 | SI2300 | TWGMC(台湾迪嘉) | MOS(场效应管) | 10+:￥0.23765
100+:￥0.175175
300+:￥0.1637
1000+:￥0.152225
5000+:￥0.147125
10000+:￥0.144605
|
立创商城 | SI2300 | PUOLOP(迪浦) | 连续漏极电流（Id）（25°C 时）：3.6A 漏源电压（Vdss）：20V 栅源极阈值电压：1.5V @ 250uA 漏源导通电阻：70mΩ @ 3.6A,4.5V 最大功率耗散（Ta=25°C）：1.25W 类型：N沟道 | 1+:￥1.4657
10+:￥1.0908
30+:￥1.022
100+:￥0.9531
500+:￥0.9225
1000+:￥0.9074
|
立创商城 | SI2300 | MDD | MOS(场效应管) | 20+:￥0.183153
200+:￥0.135337
600+:￥0.126554
2000+:￥0.117772
10000+:￥0.113868
20000+:￥0.11194
|
立创商城 | SI2300 | Hottech(合科泰) | 连续漏极电流（Id）（25°C 时）：5A 漏源电压（Vdss）：20V 栅源极阈值电压：1.5V @ 250uA 漏源导通电阻：60mΩ @ 4A,2.5V 最大功率耗散（Ta=25°C）：- 类型：N沟道 | 10+:￥0.248321
100+:￥0.186745
300+:￥0.175436
1000+:￥0.164126
5000+:￥0.159099
10000+:￥0.156616
|
立创商城 | SI2300A | UMW(友台半导体) | 连续漏极电流（Id）（25°C 时）：6A 漏源电压（Vdss）：20V 栅源极阈值电压：1V @ 50uA 漏源导通电阻：25mΩ @ 6A,4.5V 最大功率耗散（Ta=25°C）：- 类型：N沟道 | 10+:￥0.236186
100+:￥0.176112
300+:￥0.165078
1000+:￥0.154044
5000+:￥0.14914
10000+:￥0.146717
|
立创商城 | SI2300BDS-T1-GE3 | VBsemi(台湾微碧) | MOS(场效应管) | 10+:￥0.318651
100+:￥0.233685
300+:￥0.218079
1000+:￥0.182226
5000+:￥0.175983
10000+:￥0.172899
|
立创商城 | SI2300DS-T1-GE3 | VISHAY(威世) | 连续漏极电流（Id）（25°C 时）：3.6A 漏源电压（Vdss）：30V 栅源极阈值电压：1.5V @ 250uA 漏源导通电阻：68mΩ @ 2.9A,4.5V 最大功率耗散（Ta=25°C）：1.1W 类型：N沟道 | 1+:￥1.5046
10+:￥1.1739
30+:￥1.1132
100+:￥1.020828
500+:￥0.994638
1000+:￥0.981737
|
立创商城 | SI2300DS-T1-GE3 | VBsemi(台湾微碧) | MOS(场效应管) | 5+:￥0.390692
50+:￥0.289909
150+:￥0.271398
500+:￥0.227598
2500+:￥0.220194
5000+:￥0.216536
|
立创商城 | SI2300-TP | MCC(美微科) | MOS(场效应管) | 1+:￥0.78
10+:￥0.6
|