Channel TypeN

Collector Current444 A

Collector to Emitter Shorted Voltage1700 V

Collector to Emitter Voltage1700 V

ConfigurationArray

Continuous Collector Current444 A

Energy Rating340 mJ

Gate Capacitance26.4 nF

Height0.669" (17mm)

Maximum Operating Temperature+150 °C

Mounting TypeScrew

Package TypeSEMIX 33c

PolarityN-Channel

Primary TypeSi

Product HeaderTrench N-Channel IGBT Module

Resistance, Thermal, Junction to Case0.071 K/W

SeriesIGBT Series

Temperature Operating Range-55 to +150 °C

Transistor TypeIGBT

TypeTrench

Voltage, Saturation, Collector to Emitter1.7 V @ 25°C (Typ.)

Width6.417" (163mm)