Series-

PackageBulk

FET TypeP-Channel

TechnologyMOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)20 V

Current - Continuous Drain (Id) @ 25°C4.1A (Ta)

Drive Voltage (Max Rds On, Min Rds On)-

Rds On (Max) @ Id, Vgs55mOhm @ 2.4A, 4.5V

Vgs(th) (Max) @ Id1.25V @ 250µA

Gate Charge (Qg) (Max) @ Vgs13 nC @ 4.5 V

Vgs (Max)±12V

Input Capacitance (Ciss) (Max) @ Vds1000 pF @ 10 V

FET Feature-

Power Dissipation (Max)530mW (Ta), 6.25W (Tc)

Operating Temperature-55°C ~ 150°C (TJ)

Mounting TypeSurface Mount

Supplier Device Package6-TSOP

Package / CaseSC-74, SOT-457