Current - Continuous Drain (Id) @ 25° C：90A

Drain to Source Voltage (Vdss)：30V

FET Feature：Logic Level Gate

FET Type：MOSFET N-Channel, Metal Oxide

Gate Charge (Qg) @ Vgs：38nC @ 10V

Input Capacitance (Ciss) @ Vds：3900pF @ 15V

Mounting Type：Surface Mount

Package / Case：TO-252-3, DPak (2 Leads + Tab), SC-63

Power - Max：79W

Rds On (Max) @ Id, Vgs：4 mOhm @ 30A, 10V

Supplier Device Package：PG-TO252-3

Vgs(th) (Max) @ Id：2.2V @ 250µA

包装：3TO-252

通道模式：Enhancement

最大漏源电压：30 V

最大连续漏极电流：90 A

RDS -于：4@10V mOhm

最大门源电压：±20 V

工作温度：-55 to 175 °C

安装：Surface Mount

标准包装：Tape & Reel