Series-

PackageTray

FET Type2 N-Channel

FET FeatureSilicon Carbide (SiC)

Drain to Source Voltage (Vdss)1200V

Current - Continuous Drain (Id) @ 25°C530mA

Rds On (Max) @ Id, Vgs3.55mOhm @ 530A, 15V

Vgs(th) (Max) @ Id3.6V @ 140mA

Gate Charge (Qg) (Max) @ Vgs1362nC @ 4V

Input Capacitance (Ciss) (Max) @ Vds39.6nF @ 800V

Power - Max-

Operating Temperature-40°C ~ 150°C (TJ)

Mounting TypeChassis Mount

Package / CaseModule

Supplier Device PackageModule