SeriesCAB425M12XM3
PackageBulk
FET Type2 N-Channel (Half Bridge)
FET FeatureSilicon Carbide (SiC)
Drain to Source Voltage (Vdss)1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C450A
Rds On (Max) @ Id, Vgs4.2mOhm @ 425A, 15V
Vgs(th) (Max) @ Id3.6V @ 115mA
Gate Charge (Qg) (Max) @ Vgs1135nC @ 15V
Input Capacitance (Ciss) (Max) @ Vds30.7nF @ 800V
Power - Max50mW
Operating Temperature-40°C ~ 175°C (TJ)
Mounting TypeChassis Mount
Package / CaseModule
Supplier Device Package-