Series-

PackageBulk

FET TypeN-Channel

TechnologySiCFET (Silicon Carbide)

Drain to Source Voltage (Vdss)1200 V

Current - Continuous Drain (Id) @ 25°C300A (Tc)

Drive Voltage (Max Rds On, Min Rds On)-

Rds On (Max) @ Id, Vgs-

Vgs(th) (Max) @ Id5.6V @ 80mA

Gate Charge (Qg) (Max) @ Vgs-

Vgs (Max)+22V, -4V

Input Capacitance (Ciss) (Max) @ Vds15000 pF @ 10 V

FET Feature-

Power Dissipation (Max)1360W (Tc)

Operating Temperature-40°C ~ 150°C (TJ)

Mounting TypeChassis Mount

Supplier Device PackageModule

Package / CaseModule