| 销售商 | 型号 | 制造商 | 功能描述 | 价格 |
Am2 | BSC0901NSI | Infineon | FET - 单 OptiMOS?? 分立半导体产品 | 5000+:￥4.81
10000+:￥4.63
25000+:￥4.48
50000+:￥4.34995+:￥5.92
10+:￥4.95
50+:￥4.7
100+:￥4.4
200+:￥4.1945+:￥9.48 |
Avnet Express | BSC0901NSI | Infineon Technologies Americas Inc. | SP000819818_N-KANAL POWER MOS_TR_RO | 5,000 : $0.8255
20,000 : $0.762
45,000 : $0.7076
|
Chip1Stop | BSC0901NSI | Infineon Technologies AG | Trans MOSFET N-CH 30V 28A 8-Pin TDSON EP
RoHS : Compliant | 5 : $0.82
50 : $0.64
200 : $0.57
|
ChipOneStop | BSC0901NSI | Infineon | FET - 单 OptiMOS?? 分立半导体产品 | 5000+:￥4.81
10000+:￥4.63
25000+:￥4.48
50000+:￥4.34995+:￥5.92
10+:￥4.95
50+:￥4.7
100+:￥4.4
200+:￥4.19 |
Digi-Key 得捷电子 | BSC0901NSI | Infineon Technologies AG | MOSFET N-CH 30V 28A 8TDSON | 5,000 : $0.65875
|
Digi-Key 得捷电子 | BSC0901NSI | Infineon | FET - 单 OptiMOS?? 分立半导体产品 | 5000+:￥4.81
10000+:￥4.63
25000+:￥4.48
50000+:￥4.3499 |
Digi-Key 得捷电子 | BSC0901NSIATMA1 | Infineon Technologies | MOSFET N-CH 30V 28A/100A TDSON | $1.25000 |
Mouser 贸泽电子 | BSC0901NSI | Infineon Technologies | MOSFET N-Ch 30V 100A TDSON-8 | 1:¥9.4468
10:¥8.0682
100:¥6.2037
500:¥5.4805
1,000:¥4.3279
5,000:¥4.3279
|
Mouser 贸泽电子 | BSC0901NSIXT | Infineon Technologies | MOSFET N-Ch 30V 100A TDSON-8 | 1:¥9.4468
10:¥8.0682
100:¥6.2037
500:¥5.4805
5,000:¥3.8307
10,000:查看
|
Verical | BSC0901NSI | Infineon | FET - 单 OptiMOS?? 分立半导体产品 | 5000+:￥4.81
10000+:￥4.63
25000+:￥4.48
50000+:￥4.34995+:￥5.92
10+:￥4.95
50+:￥4.7
100+:￥4.4
200+:￥4.1945+:￥9.481+:￥7.3501 |
Verical | BSC0901NSI | Infineon Technologies AG | Trans MOSFET N-CH 30V 28A 8-Pin TDSON EP | $1.025
|
立创商城 | BSC0901NSI | Infineon(英飞凌) | 连续漏极电流（Id）（25°C 时）：28A,100A(Tc) 漏源电压（Vdss）：30V 栅源极阈值电压：2.2V @ 250uA 漏源导通电阻：2mΩ @ 30A,10V 最大功率耗散（Ta=25°C）：2.5W 类型：N沟道 | 1+:￥10.19
10+:￥7.72
30+:￥7.26
100+:￥6.8
500+:￥6.6
1000+:￥6.5
|