Series-

PackageBulk

FET TypeN-Channel

TechnologyMOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)500 V

Current - Continuous Drain (Id) @ 25°C20A (Ta)

Drive Voltage (Max Rds On, Min Rds On)-

Rds On (Max) @ Id, Vgs290mOhm @ 10A, 10V

Vgs(th) (Max) @ Id3.5V @ 1mA

Gate Charge (Qg) (Max) @ Vgs55 nC @ 10 V

Vgs (Max)±30V

Input Capacitance (Ciss) (Max) @ Vds3300 pF @ 10 V

FET Feature-

Power Dissipation (Max)150W (Ta)

Operating Temperature150°C

Mounting TypeThrough Hole

Supplier Device PackageTO-3P

Package / CaseTO-3P-3, SC-65-3