Current - Continuous Drain (Id) @ 25° C：20A

Drain to Source Voltage (Vdss)：20V

FET Feature：Logic Level Gate

FET Type：MOSFET N-Channel, Metal Oxide

Gate Charge (Qg) @ Vgs：20nC @ 4V

Input Capacitance (Ciss) @ Vds：2450pF @ 10V

Mounting Type：Surface Mount

Package / Case：8-HVSON

Power - Max：1.5W

Rds On (Max) @ Id, Vgs：5.8 mOhm @ 20A, 4.5V

Supplier Device Package：8-HVSON

Vgs(th) (Max) @ Id：1.5V @ 1mA