SeriesMDmesh™ M6

PackageTube

FET TypeN-Channel

TechnologyMOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)600 V

Current - Continuous Drain (Id) @ 25°C25A (Tc)

Drive Voltage (Max Rds On, Min Rds On)10V

Rds On (Max) @ Id, Vgs125mOhm @ 12.5A, 10V

Vgs(th) (Max) @ Id4.75V @ 250µA

Gate Charge (Qg) (Max) @ Vgs33.4 nC @ 10 V

Vgs (Max)±25V

Input Capacitance (Ciss) (Max) @ Vds1515 pF @ 100 V

FET Feature-

Power Dissipation (Max)190W (Tc)

Operating Temperature-55°C ~ 150°C (TJ)

Mounting TypeThrough Hole

Supplier Device PackageI2PAK (TO-262)

Package / CaseTO-262-3 Long Leads, I²Pak, TO-262AA