Channel TypeN

Collector Current830 A

Collector to Emitter Shorted Voltage1700 V

Collector to Emitter Voltage1700 V

ConfigurationSingle

Continuous Collector Current830 A

Dimensions106.4 x 61.4 x 36.5 mm

Energy Rating580 mJ

Fall Time160 nS (Typ.)

Gate Capacitance39.6 nF

Gate to Emitter Voltage±20 V

Height1.437" (36.5mm)

Length4.188" (106.4mm)

Maximum Operating Temperature+150 °C

Minimum Operating Temperature-40 °C

Mounting TypeScrew

Number of Pins4

Operating and Storage Temperature-40 to 150°C (Operating) and 125°C (Storage)

Package TypeD 59

PolarityN-Channel

Primary TypeSi

Product HeaderTrench N-Channel IGBT Module

Resistance, Thermal, Junction to Case0.04 K/W

Rise Time90 nS (Typ.)

SeriesIGBT Series

Temperature Operating Range-40 to +150 °C

Transistor TypeIGBT

TypeTrench

Voltage, Saturation, Collector to Emitter2 V (Typ.)

Width2.417" (61.4mm)