Channel TypeN

Collector Current660 A

Collector to Emitter Resistance1.8 Milliohms (Typ.)

Collector to Emitter Shorted Voltage1200 V

Collector to Emitter Voltage1200 V

ConfigurationDual

Continuous Collector Current660 A

Dimensions106.4 x 61.4 x 30.5 mm

Energy Rating103 mJ

Gate Capacitance32 nF

Gate to Emitter Voltage±20 V

Height1.201" (30.5mm)

Input Capacitance32 nF (Typ.)

Length4.188" (106.4mm)

Maximum Operating Temperature+150 °C

Minimum Operating Temperature-40 °C

Mounting TypeScrew

Number of Pins7

Package TypeD 56

PolarityN-Channel

Primary TypeSi

Product HeaderTrench N-Channel IGBT Module

Resistance, Thermal, Junction to Case0.055 K/W

SeriesIGBT Series

Temperature Operating Range-40 to +150 °C

Transistor TypeIGBT

Turn Off Time670 ns (Typ.)

Turn On Time290 ns (Typ.)

TypeTrench

Width2.417" (61.4mm)