销售商 | 型号 | 制造商 | 功能描述 | 价格 |
 Allied Electronics | SI4463BDY-T1-E3 | Siliconix / Vishay | MOSFET; P-Channel; -20 V; + 12 V; 0.009Ohms @ -4.5 V; -13 A; 1.5 W @ degC | +2500:$1.21 +125000:$1.19 |
 Avnet Express | SI4463BDY-T1-E3 | Vishay Semiconductors | - Tape and Reel | 2,500 : $0.5838
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 Avnet Express | SI4463BDY-T1-E3 | Vishay Siliconix | TRANS MOSFET P-CH 20V 9.8A 8SOIC N - Tape and Reel | 2,500 : $0.6535 12,499 : $0.6422 24,999 : $0.6279
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 Avnet Express | SI4463BDY-T1-E3 | Vishay Semiconductors | PCHAN 2.5-V MOSFET | 2,500 : $0.52
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 Chip1Stop | SI4463BDY-T1-E3 | Vishay Intertechnologies | MOSFET RoHS : Compliant | 5 : $1.58 50 : $1.06 100 : $0.977
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 Digi-Key 得捷电子 | SI4463BDY-T1-E3 | Vishay Siliconix | MOSFET P-CH 20V 9.8A 8-SOIC | 5,000 : $0.50939 2,500 : $0.5362
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 Digi-Key 得捷电子 | SI4463BDY-T1-E3 | Vishay Siliconix | MOSFET P-CH 20V 9.8A 8SO | $1.62000 |
 Digi-Key 得捷电子 | SI4463BDY-T1-GE3 | Vishay Siliconix | MOSFET P-CH 20V 9.8A 8SO | $1.62000 |
 element14 Asia-Pacific | SI4463BDY-T1-E3 | Vishay Siliconix | MOSFET P SOIC RoHS : Compliant | 1 : $10.03 10 : $8.88 25 : $8.02 100 : $7.01 250 : $6.15 500 : $5.55
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 Future Electronics | SI4463BDY-T1-E3 | Vishay Intertechnologies | Single P-Channel 20 V 0.011 Ohms Surface Mount Power Mosfet - SOIC-8 RoHS : Compliant | 750 : $0.6055
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 Mouser 贸泽电子 | SI4463BDY-T1-E3 | Vishay / Siliconix | MOSFET 20V 13.7A 0.011Ohm | 1:¥12.0684 10:¥9.9892 100:¥7.7631 500:¥6.8026 1,000:¥5.6387 2,500:¥5.6387
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 Mouser 贸泽电子 | SI4463BDY-T1-GE3 | Vishay / Siliconix | MOSFET 20V 13.7A 3.0W 11mohm @ 10V | 1:¥12.0684 10:¥9.9892 100:¥7.7631 500:¥6.8026 1,000:¥5.6387 2,500:¥5.6387
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 Verical | SI4463BDY-T1-E3 | Vishay Intertechnologies | Trans MOSFET P-CH 20V 9.8A 8-Pin SOIC N T/R | $0.6421
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 立创商城 | SI4463BDY-T1 | VBsemi(台湾微碧) | 连续漏极电流(Id)(25°C 时):13A(Tc) 漏源电压(Vdss):20V 栅源极阈值电压:1.2V @ 250uA 漏源导通电阻:18mΩ @ 5.6A,4.5V 最大功率耗散(Ta=25°C):19W(Tc) 类型:P沟道 | 1+:¥1.3522 10+:¥0.9992 30+:¥0.9344 100+:¥0.8695 500+:¥0.8407 1000+:¥0.8265
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 立创商城 | SI4463BDY-T1-E3 | VISHAY(威世) | 连续漏极电流(Id)(25°C 时):9.8A 漏源电压(Vdss):20V 栅源极阈值电压:1.4V @ 250uA 漏源导通电阻:11mΩ @ 13.7A,10V 最大功率耗散(Ta=25°C):1.5W 类型:P沟道 | 1+:¥12.08 10+:¥9.42 30+:¥9.25 100+:¥9.09
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