型号 | 功能描述 | 生产厂商 | 厂商LOGO | PDF大小 | PDF页数 | 下载地址 | 相关型号 |
SI4410DY-T1 | 连续漏极电流(Id)(25°C 时):12A(Tc) 漏源电压(Vdss):20V 栅源极阈值电压:3V @ 250uA 漏源导通电阻:12mΩ @ 10A,10V 最大功率耗散(Ta=25°C):4.1W(Tc) 类型:N沟道 | VBsemi(台湾微碧) |  | 865.63 Kbytes | 共9页 |  | 无 |
SI4410DY-T1-A-E3 | N-Channel 30-V (D-S) MOSFET | VISHAY[Vishay Siliconix] | ![VISHAY[Vishay Siliconix]的LOGO](/PdfSupLogo/177VISHAY.GIF) | 61.1 Kbytes | 共4页 |  | SI4830DY,SUM110N03,SI4832DY,72893,SI7886DP,SUM110N03-03P,SI4330DY,SIF912EDZ,SI4348DY,SI7894ADP |
SI4410DY-T1-E3 | N-Channel 650 V (D-S) MOSFET | VBSEMI[VBsemi Electronics Co.,Ltd] | ![VBSEMI[VBsemi Electronics Co.,Ltd]的LOGO](/PdfSupLogo/1345VBSEMI.GIF) | 1086.12 Kbytes | 共9页 |  | 无 |
SI4410DY-T1-REVA | N-Channel 30-V (D-S) MOSFET | VISHAY[Vishay Siliconix] | ![VISHAY[Vishay Siliconix]的LOGO](/PdfSupLogo/177VISHAY.GIF) | 61.1 Kbytes | 共4页 |  | SI4830DY,SUM110N03,SI4832DY,72893,SI7886DP,SUM110N03-03P,SI4330DY,SIF912EDZ,SI4348DY,SI7894ADP |